ERBIUM AND YTTERBIUM ION-DOPED POROUS SILICON STRUCTURES

This scientific work is devoted to the study of the luminescent properties of semiconductor materials for the development of optoelectronic devices. The article examines oxidized porous silicon obtained by the method of electrochemical etching, doped with erbium and ytterbium ions. The review part of the work covers the main publications devoted to the development of efficient luminescence of porous silicon doped with rare earth metals. A structural and morphological analysis of the obtained samples, including experimental processing by methods of scanning electron microscopy and Raman spectroscopy with various technological parameters, was carried out. The research results can be used to develop a method for the production of photoelectric converters based on silicon for use in optoelectronics.